教員情報

今井 大地
イマイ ダイチ
理工学部 材料機能工学科
助教
Last Updated :2019/04/22

基本情報

プロフィール

    男性

学歴

  • 2011年04月, 2014年03月, 千葉大学, 大学院工学研究科 , 博士後期課程 , 博士, 修了 

職歴

  • 2014年, 2015年, 日本学術振興会, 特別研究員(PD)
  • 2015年, 2016年, 千葉大学, 産業連携学術研究推進ステーション、SMARTグリーンイノベーション研究拠点, 特任研究員

現在所属している学会

  • 応用物理学会

研究活動

研究分野

  • 応用物性・結晶工学, 半導体工学

研究キーワード

  • 半導体光物性
  • 光半導体デバイス
  • 窒化物半導体

学術論文

  • Proposal of leak current passivation for InGaN solar cells to reduce the leakage current
    共著
    Ke Wang, Daichi Imai, Kazuhide Kusakabe, and Akihiko Yoshikawa
    Applied Physics Letters
    American Institute of Physics
    108, 042108
    2016年
  • Leak path passivation by in situ Al-N for InGaN solar cells operating at wavelength up to 570 nm
    共著
    Ke Wang, Daichi Imai, Kazuhide Kusakabe, and Akihiko Yoshikawa
    Applied Physics Letters
    American Institute of Physics
    108, 092105
    2016年
  • Growth kinetics and structural perfection of (InN)1/(GaN)1–20 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy
    共著
    Kazuhide Kusakabe, Naoki Hashimoto, Takaomi Itoi, Ke Wang, Daichi Imai, and Akihiko Yoshikawa
    Applied Physics Letters
    American Institute of Physics
    108, 152107, 1, 5
    2016年
  • InN/GaN Short-period superlattice as ordered InGaN ternary alloy
    共著
    Kazuhide Kusakabe, Daichi Imai, Ke Wang, and Akihiko Yoshikawa
    Physica Status Soldi C
    1, 4
    2015年
  • Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy
    共著
    Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwra, X. Q. Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
    Journal of Electronic Materials
    TMS and IEEE in partnership with Springer Science + Business Media
    42, 5, 875, 881
    2013年
  • Electron and hole scattering dynamics in InN films investigated by infrared measurements
    共著
    Yoshihiro Ishitani, Masayuki Fujiwara, Daichi Imai, X. Q. Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
    Physica Status Soldi A
    WILEY-VHC Verlag GmbH & CO. KGaA, Weinheim
    209, 1, 56, 64
    2012年
  • Carrier recombination processes in In-polar and N-polar p-type InN films
    共著
    Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwara, X. Q. Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
    Physica Status Soldi B
    WILEY-VHC Verlag GmbH & CO. KGaA, Weinheim
    249, 3, 472, 475
    2012年
  • Carrier recombination processes in Mg doped N-polar InN films
    共著
    Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwara, X. Q. Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
    Applied Physics Letters
    American Institute of Physics
    98, 181908
    2011年

講演・口頭発表等

  • Non-radiative carrier recombination processes in N-polar Mg-doped InN
    共著
    Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwara, X. Q. Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
    Asia Pacific Workshop on Wide gap Semiconductors 2011 We-P68
    2011年05月
  • Carrier recombination processes in In-polar and N-polar p-type InN films
    共著
    Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwara, X. Q. Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
    9th International Conference on Nitride Semiconductors PD3.08
    2011年07月
  • Analysis of carrier recombination processes in InN films by mid-infrared spectroscopy
    共著
    Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwara, X. Q. Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
    Electron Materials Conference 2012 EE-6
    2012年06月
  • Mid and Far-infrared analysis of the local electron lattice dynamics on carrier recombination processes in InN films
    共著
    Daichi Imai, Yoshihiro Ishitani, X. Q. Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
    International Workshop on Nitride semiconductors 2012 PR4-3
    2012年10月
  • Effects of Carrier Transport and Local Lattice Temperature on Nonradiative Recombination processes in InN Films
    共著
    Daichi Imai, Yoshihiro Ishitani, Xinqiang Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
    10th International Conference on Nitride Semiconductors B12. 06
    2013年08月
  • SMART III-Nitride tandem solar cells with using novel digital alloys of InN/GaN short-period superlattices: Theoretical and experimental
    共著
    Akihiko Yoshikawa, Kazuhide Kusakabe, Naoki Hashimoto, Ke Wang, Daichi Imai, and Xinqiang Wang
    The 4th cross-straight workshop on wide band gap semiconductors
    2014年08月
  • Band engineering technology in quasi ternary InGaN alloy system based on SMART (InN)1/(GaN)n digital alloys
    共著
    Daichi Imai, Kazuhide Kusakabe, Ke Wang, and Akihiko Yoshikawa
    2014 MRS Fall meeting & Exhibit
    2014年11月
  • Novel structure photonic devices using “1 ML” InN/GaN matrix QW-based active layer
    共著
    Akihiko Yoshikawa, Kazuhide Kusakabe, Ke Wang, and Daichi Imai
    10th International Symposium on Semiconductor Light Emitting Diodes (ISSLED)
    2014年12月
  • 1 ML InN/GaN matrix coherent-structure QW system and its evolution to short period superlattice-based InGaN ternary alloys
    共著
    A. Yoshikawa, K. Kusakabe, K. Wang, and D. Imai
    42nd Int. Conf. on Metallurgical Coatings and Thin Film
    2015年04月
  • Proposal of “1 ML” InN / GaN Matrix Coherent-Structure QW System and Its Application for Novel Structure Photonic Devices
    共著
    A. Yoshikawa, K. Kusakabe, K. Wang, and D. Imai
    IEEE Photonics Society
    2015年06月
  • Development of Superfine Structure One Monolayer-thick InN/GaN-Matrix MQW System using Novel ALEp Method: Dynamic-ALEp
    共著
    A. Yoshikawa, K. Kusakabe, K. Wang, and D. Imai
    15th International Conference on Atomic Layer Deposition ALD2015
    2015年06月
  • InGaN quasi-ternary alloys based on (InN)1/(GaN)4 short-period superlattices
    共著
    Daichi Imai, Kazuhide Kusakabe, Ke Wang, and Akihiko Yoshikawa
    11th International Conference on Nitride Semiconductors
    2015年08月
  • In-situ ellipsometry observation of Al adatoms and oxidation/nitridation processes for deactivating leak paths in nitride solar cells
    共著
    Ke Wang, Daichi Imai, Kazuhide Kusakabe, and Akihiko Yoshikawa
    11th International Conference on Nitride Semiconductors
    2015年08月
  • Systematic study on dynamic atomic layer epitaxy (D-ALEp) on InN on/in GaN matrix and its extension for whole III-N (AlN/GaN/InN) system
    共著
    Akihiko Yoshikawa, Kazuhide Kusakabe, Ke Wang, and Daichi Imai
    9th workshop on frontiers in electronics (WOFE-2015) & workshop on multi functional nanomaterials
    2015年12月
  • Systematic study on dynamic atomic layer epitaxy (D-ALEp) of InN on/in GaN matrix and its application for fabricating ordered alloys in whole III-N system
    共著
    Akihiko Yoshikawa, Kazuhide Kusakabe, Ke Wang, and Daichi Imai
    2016年02月


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