教員情報

上山 智
カミヤマ サトシ
理工学部 材料機能工学科
教授
Last Updated :2019/02/21

基本情報

プロフィール

    男性
  • メールアドレス

    skamimeijo-u.ac.jp

大学院その他

  • 理工学研究科 電気電子・情報・材料工学専攻, 教授
  • 理工学研究科 材料機能工学専攻, 教授

学歴

  • 1985年03月, 名古屋大学, 工学部, 電子工学科, 卒業
  • 1995年10月,  

現在所属している学会

  • 応用物理学会
  • IEEE
  • International Conference on MOVPE 論文委員

学会

  • 1986年04月, 応用物理学会会員  
  • 1989年03月, 1991年12月, 電子情報通信学会会員
  • 1992年10月, IEEE会員  
  • 2000年09月, 2000年09月, International Workshop on Nitride Semiconductors 2000 現地実行委員
  • 2002年09月, 2002年09月, The 5th International Conference on Nitride Semiconductors 実行委員、論文委員
  • 2005年03月, 2005年03月, International Conference on MOVPE 論文委員
  • 2005年04月, 2005年04月, International Workshop on Nitride Semiconductors 2006 実行委員
  • 2007年04月, 2007年04月, International Symposium on Compound Semiconductors 2007 プログラム委員
  • 2007年07月, 2007年07月, 環境省特定調達品目検討会(LED分科会)委員

委員歴(学外)

  • 2009年05月, SPIE Photonics West 2010, プラグラム委員
  • 2009年06月, ISPlasma2010 現地実行委員
  • 2010年05月, SPIE Photonics West 2011, プラグラム委員

研究活動

研究分野

  • その他, 半導体工学
  • 原子・分子・量子エレクトロニクス, 量子力学
  • 電子デバイス・電子機器, 光デバイス
  • 電子デバイス・電子機器, 電子物性一般

教育研究への取り組み・抱負

    教員活動においては、量子力学、物性基礎論、半導体基礎論等、材料の電気、電子的な物性を取り扱う科目を担当している。これらは学生には難解な科目であり、スライド等を使用したビジュアルな授業、また問題を数多く解くことで、理解が深まるよう心掛けている。研究面における活動では、窒化物半導体、SiCなどのワイドギャップ半導体の結晶成長、デバイス研究、また物性研究を行っている。これらの材料の大きなアプリケーションとして白色LEDを取り上げ、従来技術を大きく凌駕する性能実証を目指している。また、ナノテクノロジーを駆使した光の量子化、電子の量子化、またこれら技術の発光素子への応用に関する研究も力を入れている。

学術論文

  • Anallllysis of strain relaxation process in GaInN/GaN heterostructure by in situ x-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth
    共著
    D. Iida, Y. Kondo, M. Sowa, T. Sugiyama, M. Iwaya, T. Takeuchi, S. Kamiyama and I. Akasaki
    physica status solidi (RRL) - Rapid Research Letters
    7, 211, 214
    2013年
  • Nitride-based field-effect-transistor-type photosensors with extremely high photosensitivity
    共著
    M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama and I. Akasaki
    physica status solidi (RRL) - Rapid Research Letters
    7, 215, 217
    2013年
  • Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
    共著
    T. Suzuki, M. Kaga, K. Naniwae, T. Kitano, K. Hirano, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    Japanese Journal of Applied Physics
    52, 08JB27
    2013年
  • Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
    共著
    M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    Japanese Journal of Applied Physics
    52, 08JF02
    2013年
  • Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
    共著
    K. Matsui, K. Yamashita, M. Kaga, T. Morita, T. Suzuki, T. Takeuch, S. Kamiyama, M. Iwaya, and I. Akasaki
    Japanese Journal of Applied Physics
    52, 08JG02
    2013年
  • Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes
    共著
    Tsubasa Nakashima, Kenichiro Takeda, Hiroshi Shinzato, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki, and Hiroshi Amano
    Japanese Journal of Applied Physics
    52, 08JG07
    2013年
  • Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
    共著
    Mikiko Mori, Shinichiro Kondo, Shota Yamamoto, Tatsuro Nakao, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
    Japanese Journal of Applied Physics
    52, 08JH02
    2013年
  • GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes
    共著
    Mitsuru Kaga, Takatoshi Morita, Yuka Kuwano, Kouji Yamashita, Kouta Yagi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    Japanese Journal of Applied Physics
    52, 08JH07
    2013年
  • Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
    共著
    Toshiki Yasuda, Kouta Yagi, Tomoyuki Suzuki, Tsubasa Nakashima, Masahiro Watanabe, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, and Isamu Akasaki
    Japanese Journal of Applied Physics
    52, 08JJ05
    2013年
  • Study on Efficiency Component Estimation of 405 nm Light Emitting Diodes from Electroluminescence and Photoluminescence Intensities
    共著
    Kazuki Aoyama, Atsushi Suzuki, Tsukasa Kitano, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
    Japanese Journal of Applied Physics
    52, 08JL16
    2013年
  • Properties of nitride-based photovoltaic cells under concentrated light illumination
    共著
    S. Yamamoto, M. Mori, Y. Kuwahara, T. Fujii, T. Nakao, S. Kondo, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    physica status solidi (RRL) - Rapid Research Letters
    6, 145, 147
    2012年
  • Laser lift-off of AlN/sapphire for UV light-emitting diodes
    共著
    H. Aoshima, K. Takeda, K. Takehara, S. Ito, M. Mori, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    physica status solidi (c)
    9, 753
    2012年
  • Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors
    共著
    K. Ikeda, Y. Isobe, H. Ikki, T. Sakakibara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki and H. Amano
    physica status solidi (c)
    9, 942
    2012年
  • Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate
    共著
    T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka and Y. Mori
    physica status solidi (c)
    9, 875
    2012年
  • Growth of GaN and AlGaN on (100) β-Ga2O3 substrates
    共著
    S. Ito, K. Takeda, K. Nagata, . Aoshima, K. Takehara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki and H. Amano
    physica status solidi (c)
    9, 519
    2012年
  • Correlation between Device Performance and Defects in GaInN-Based Solar Cells
    共著
    M. Mori, S. Kondo, S. Yamamoto, T. Nakao, T. Fujii, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    Applied Physics Express
    5, 082301
    2012年
  • Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
    共著
    K. Yagi, M. Kaga, K. Yamashita, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, H. Amano, and I. Akasaki
    Japanese Journal of Applied Physics
    51, 051001
    2012年
  • Indium-Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
    共著
    K. Takehara, K. Takeda, S. Ito, H. Aoshima, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and . Amano
    Japanese Journal of Applied Physics
    51, 042101
    2012年
  • Properties of nitride-based photovoltaic cells under concentrated light illumination
    共著
    S. Yamamoto, M. Mori, Y. Kuwahara, T. Fujii, T. Nakao, S. Kondo, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki and H. Amano
    physica status solidi (RRL) - Rapid Research Letters
    6, 145
    2012年
  • Fluorescent SiC as a new material for white LEDs
    共著
    M. Syväjärvi, J. Müller, J. W. Sun, V. Grivickas, Y. Ou, V. Jokubavicius, P. Hens, M. Kaisr, K. Ariyawong, K. Gulbinas, R. Liljedahl, M. K. Linnarsson, S. Kamiyama, P. Wellmann, E. Spiecker and H. Ou
    Phys. Scr
    T148, 014002
    2012年
  • Growth and light properties of fluorescent SiC for white LEDs
    共著
    M. Syväjärvi, R. Yakimova, M. Iwaya, T. Takeuchi, I. Akasaki, S. Kamiyama
    Materials Science Forum
    717-720, 87, 92
    2012年
  • On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates
    共著
    V. Jokubavicius, B. Lundqvist, P. Hens, R. Liljedahl, R. Yakimova, S. Kamiyama
    Materials Science Forum
    717-720, 193, 196
    2012年
  • Photoluminescence and Raman spectroscopy characterization of boron and nitrogen-doped 6H silicon carbide
    共著
    Y. Ou, V. Jokubavicius, C. Liu, R. W. Berg, M. Linnarsson, S. Kamiyama, Z. Lu, R. Yakimova, M. Syväjärvi, and H. Ou
    Materials Science Forum
    717-720, 233, 236
    2012年
  • Geometrical control of 3C and 6H-SiC nucleation of low off-axis substrates
    共著
    V. Jokubavicius, R. Liljedahl, Y. Ou, H. Ou, S. Kamiyama, R. Yakimova, and M. Syväjärvi
    Materials Science Forum
    717-720, 103, 106
    2012年
  • White light-emitting diode based on fluorescent SiC
    共著
    S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, R. Yakimova, M. Syväjärvi,
    Materials Science Forum
    717-720, 87, 92
    2012年
  • Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations
    共著
    J. W. Sun, S. Kamiyama, V. Jokubavicius, H. Peyre, R. Yakimova, S. Juillaguet and M. Syväjärvi
    J. Phys. D
    45, 235107
    2012年
  • Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium
    共著
    J. W. Sun, V. Jokubavicius, R. Liljedahl, R. Yakimova, S. Juillaguet, J. Camassel, S. Kamiyama, M. Syväjärvi
    Thin Solid Films
    522, 33, 35
    2012年
  • White light-emitting diode based on fluorescent SiC
    共著
    S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, R. Yakimova, M. Syväjärvi
    Thin Solid Films
    522, 23, 25
    2012年
  • Effects of source material on epitaxial growth of fluorescent SiC
    共著
    V. Jokubavicius, P. Hens, R. Liljedahl, J.W. Sun, M. Kaiser, P. Wellmann, S. Sano, R. Yakimova, S. Kamiyama, M. Syväjärvi
    Thin Solid Films
    522, 7, 10
    2012年
  • Fluorescent SiC and its application to white light-emitting diodes
    共著
    S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova
    Journal of Semiconductor
    32, 013004
    2011年
  • Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method
    共著
    D. Iida, T. Sakakibara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, M. Imade, Y. Kitaoka and Y. Mori
    physica status solidi (a)
    208, 1191, 1194
    2011年
  • Injection efficiency in AlGaN-based UV laser diodes
    共著
    K. Nagata, K. Takeda, Y. Oshimura, K. Takehara, H. Aoshima, S. Ito, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan
    physica status solidi (c)
    8, 2384, 2386
    2011年
  • GaInN-based solar cells using GaInN/GaInN superlattices
    共著
    T. Fujii, Y. Kuwahara, D. Iida, Y. Fujiyama, Y. Morita, T. Sugiyama, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    physica status solidi (c)
    8, 2463, 2465
    2011年
  • Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
    共著
    K. Ban, J. Yamamoto, K. Takeda, K. Ide, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    Applied Physics Express
    4, 052101
    2011年
  • Microstructures of GaInN/GaInN Superlattices on GaN Substrates
    共著
    T. Sugiyama, Y. Kuwahara, Y. Isobe, T. Fujii, K. Nonaka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    Applied Physics Express
    4, 015701
    2011年
  • GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate
    共著
    Y. Kuwahara, T. Fujii, T. Sugiyama, D. Iida, Y. Isobe, Y. Fujiyama, Y. Morita, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    Applied Physics Express
    4, 021001
    2011年
  • Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method
    共著
    M. Yamakawa, K. Murata, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, and M. Azuma
    Applied Physics Express
    4, 045503
    2011年
  • High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate
    共著
    T. Sugiyama, H. Amano, D. Iida, M. Iwaya, S. Kamiyama and I. Akasaki
    Japanese Journal of Applied Physics
    50, 01AD03
    2011年
  • AlGaN/GaN heterostructure field-effect transistors on Fe-doped GaN substrates with high breakdown voltage
    共著
    Y. Oshimura, T. Sugiyama, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki and H. Amano
    Japanese Journal of Applied Physics
    50, 084102
    2011年
  • Low leakage current in AlGaN/GaN HFETs with preflow og Mg source before growth of u-GaN buffer layer
    共著
    Y. Oshimura, T. Sugiyama, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki and H. Amano
    physica status solidi (a)
    208, 1607, 1610
    2011年
  • Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC
    共著
    Y. Ou, V. Jokubavisius, S. Kamiyama, C. Liu, R. W. Berg, M. Linnarsson, R. Yakimova, M. Syvajarvi and H. Ou
    Optical Materials Express
    1, 1439, 1446
    2011年
  • Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
    共著
    T. Nakao, T. Fujii, T. Sugiyama, S. Yamamoto, D. Iida, M. Iwaya, T. Takeuchi, S Kamiyama, I. Akasaki, and H. Amano
    Applied Physics Express
    4, 101001-1
    2011年
  • AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
    共著
    M. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki
    Applied Physics Express
    4, 092102-1, 092102-3
    2011年
  • Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
    共著
    Y. Isobe, H. Ikki, T. Sakakibara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, T. Sugiyama, H. Amano, M. Imade, Y. Kitaoka, and Y. Mori
    Applied Physics Express
    4, 064102-1
    2011年
  • High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate
    共著
    T. Sugiyama, H. Amano, D. Iida, M. Iwaya, S. Kamiyama, and I. Akasaki
    Japanese Journal of Applied Physics
    50, 01AD03-1, 01AD03-3
    2011年
  • Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
    共著
    T. Inazu, S. Fukahori, C. Pernot, M. H. Kim, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki
    Japanese Journal of Applied Physics
    50, 122101
    2011年
  • Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO
    共著
    Z. H. Wu, K. W. Sun, Q. Y. Wei, A. M. Fischer, F. A. Ponce, Y. Kawai, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    Applied Physics Letters
    96, 071909
    2010年
  • High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient
    共著
    K. Nagata, T. Ichikawa, K. Takeda, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    physica status solidi (a)
    207, 1393, 1396
    2010年
  • Defects in highly Mg-doped AlN
    共著
    K. Nonaka, T. Asai, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    physica status solidi (a)
    207, 1299, 1301
    2010年
  • GaInN/GaN p-i-n light-emitting solar cells
    共著
    Y. Kuwahara, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    physica status solidi (c)
    7, 2382, 2385
    2010年
  • Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate
    共著
    T. Sugiyama, D. Iida, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    physica status solidi (c)
    7, 2419, 2422
    2010年
  • Atomic layer epitaxy of AlGaN
    共著
    K. Nagamatsu, D. Iida, K. Takeda, K. Nagata, T. Asai, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    physica status solidi (c)
    7, 2368, 2370
    2010年
  • High efficiency violet to blue light emission in porous SiC produced by anodic method
    共著
    T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    physica status solidi (c)
    7, 2459, 2462
    2010年
  • Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer
    共著
    T. Asai, K. Nonaka, K. Ban, K. Nagata, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    physica status solidi (c)
    7, 2101, 2103
    2010年
  • Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers
    共著
    K. Takeda, F. Mori, Y. Ogiso, T. Ichikawa, K. Nonaka, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
    physica status solidi (c)
    7, 1916, 1918
    2010年
  • Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode
    共著
    R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li and K. Su
    physica status solidi (c)
    7, 2180, 2182
    2010年
  • Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate
    共著
    T. Sugiyama, D. Iida, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    physica status solidi (c)
    7, 1980, 1982
    2010年
  • Growth and characterization of GaN grown on moth-eye patterned sapphire substrates
    共著
    A. Ishihara, R. Kawai, T. Kitano, A. Suzuki, T. Kondo, M. Iwaya, H. Amano, S. Kamiyama and I. Akasaki
    physica status solidi (c)
    7, 2056, 2058
    2010年
  • Nitride-based light-emitting solar cell
    共著
    Y. Kuwahara, Y. Fujiyama, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    physica status solidi (c)
    7, 2056, 2058
    2010年
  • AlGaN/GaN HFETs on Fe-doped GaN substrates
    共著
    Y. Oshimura, K. Takeda, T. Sugiyama, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh and T. Udagawa
    physica status solidi (c)
    7, 1974, 1976
    2010年
  • GaInN/GaN p-i-n light-emitting solar cells
    共著
    Y. Fujiyama, Y. Kuwahara, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    physica status solidi (c)
    7, 2382, 2385
    2010年
  • Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate
    共著
    T. Sugiyama, D. Iida, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    physica status solidi (c)
    7, 2419, 2422
    2010年
  • Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
    共著
    C. Pernot, M. Kim, S. Fukahori, T. Inazu, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano
    Applied Physics Express
    3, 061004
    2010年
  • Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
    共著
    D. Iida, K. Nagata, T. Makino, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, and T. Udagawa
    Applied Physics Express
    3, 075601
    2010年
  • Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy
    共著
    D. Iida, K. Tamura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
    Journal of Crystal Growth
    312, 3131, 3135
    2010年
  • Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
    共著
    Z. Wu, K. Nonaka, Y. Kawai, T. Asai, F. A. Ponce, C. Chen, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    Applied Physics Express
    3, 111003
    2010年
  • Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate
    共著
    Y. Kuwahara, T. Fujii, Y. Fujiyama, T. Sugiyama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    Applied Physics Express
    3, 111001
    2010年
  • Activation energy of Mg in a -plane Ga1-xInxN (0共著
    D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    physica status solidi (b)
    246, 1188, 1190
    2009年
  • High-reflectivity Ag-based p-type ohmic contacts for blue light-emitting diodes
    共著
    R. Kawai, T. Mori, W. Ochiai, A. Suzuki, M. Iwaya, H. Amano, S. Kamiyama, and I. Akasaki
    physica status solidi (c)
    6, S830, S832
    2009年
  • High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate
    共著
    M. Iwaya, S. Miura, T. Fujii, S. Kamiyama, H. Amano, and I. Akasaki
    physica status solidi (c)
    6, S972, S975
    2009年
  • Realization of high-crystalline-quality and thick GaInN films
    共著
    R. Senda, T. Matsubara, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    physica status solidi (c)
    6, S502, S505
    2009年
  • Improvement of crystalline quality of InGaN epilayers on various crystal planes of ZnO substrate by metal-organic vapor phase epitaxy
    共著
    Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    physica status solidi (c)
    6, S486, S489
    2009年
  • Activation energy of Mg in Al0.25Ga0.75N and Al0.5Ga0.5N
    共著
    K. Nagamatsu, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    physica status solidi (c)
    6, S437, S439
    2009年
  • Relaxation and recovery processes of AlxGa1−xN grown on AlN underlying layer
    共著
    T. Asai, K. Nagata, T. Mori, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    Journal of Crystal Growth
    311, 2850, 2852
    2009年
  • Novel UV devices on high-quality AlGaN using grooved underlying layer
    共著
    H. Tsuzuki, F. Mori, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan
    Journal of Crystal Growth
    311, 2860, 2863
    2009年
  • One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy
    共著
    D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    Journal of Crystal Growth
    311, 2887, 2890
    2009年
  • Growth of thick GaInN on grooved (10-1-1) GaN/(10-1-2)4H-SiC
    共著
    T. Matsubara, R. Senda, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    Journal of Crystal Growth
    311, 2926, 2928
    2009年
  • InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy
    共著
    Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    Journal of Crystal Growth
    311, 2929, 2932
    2009年
  • Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
    共著
    R. Senda, T. Matsubara, D. Iida, M. Iwaya, S. Kamiyama, H.Amano, and I. Akasaki
    Applied Physics Express
    2, 061004
    2009年
  • High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer
    共著
    H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan
    physica status solidi (a)
    206, 1199, 1204
    2009年
  • Activation energy of Mg in a -plane Ga1-xInxN (0共著
    D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    physica status solidi (b)
    246, 1188, 1190
    2009年
  • Relaxation and recovery processes of AlxGa1−xN grown on AlN underlying layer
    共著
    T. Asai, K. Nagata, T. Mori, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    Journal of Crystal Growth
    311, 2850, 2852
    2009年
  • Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient
    共著
    K. Nagata, K. Takeda, T. Ichikawa, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
    Japanese Journal of Applied Physics
    48, 101002-1, 101002-3
    2009年

講演・口頭発表等

  • (招待講演)Light excitation and extraction in LEDs
    共著
    S. Kamiyama, M. Iwaya, I. Akasaki, M. Syvajarvi, and R. Yakimova
    Intresseanmalan Sveriges Energiting 2010
    2010年03月
  • (招待講演)Fluorescent SiC and its application to white light-emitting diodes
    共著
    S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syvajarvi and R. Yakimova
    The 7th China International Forum on Solid State Lighting
    2010年10月
  • (招待講演)Fluorescent SiC and its application to white light-emitting diodes
    共著
    S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syvajarvi and R. Yakimova
    European Materials Research Society Spring Meeting
    2011年05月
  • (招待講演)Fluorescent SiC as a rare earth-free phosphor for white light-emitting diodes
    共著
    S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki
    2012 Lester Eastman Conference
    2012年08月
  • (招待講演)Potential of SiC as a rare-earth-free fluorescent material
    単著
    S. Kamiyama
    2012年12月
  • (招待講演)Fluorescent SiC for white light-emitting diodes
    共著
    S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki
    16th International Workshop on Inorganic and Organic Electroluminescence and 2012 International Conference on the Science and Technology of Emissive Displays and Lighting (EL2012)
    2012年12月
  • (招待講演)Prospect of fluorescent SiC as a rare-earth-free phosphor material
    単著
    S. Kamiyama
    European Materials Research Society Spring Meeting
    2013年05月
  • (招待講演)Introduction of the Moth-eye patterned sapphire substrate technology for cost effective high-performance LED
    共著
    SPIE Photonic west
    2013年02月
  • (招待講演)Growth and characterization of fluorescent SiC as a new phosphor material for general lighting application
    単著
    Symposium on Materials Science for Light Emitting Diodes
    2013年10月
  • (招待講演)Dislocation density dependence of stimulated emission characteristics in AlGaN/AlN multi-quantum wells
    共著
    8th International Workshop on Bulk Nitride Semiconductor
    2013年10月
  • (招待講演)In situ X-ray diffraction monitoring of group III nitride growth by MOVPE
    共著
    Workshop on Ultra-Precision Processing for III-Nitride
    2013年10月
  • (一般講演)Fabrication technique for Moth-Eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate
    共著
    T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, K.Ryosuke, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki
    Gallium Nitride Materials and Devices IV (SPIE OE106)
    2009年01月
  • (一般講演)Optical properties of a- and m-plane GaN grown by sidewall epitaxial lateral overgrowth
    共著
    P. P. Paskov, B. Monemar, D. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
    Gallium Nitride Materials and Devices IV (SPIE OE106)
    2009年01月
  • (一般講演)Temperature Dependence of Normally Off Mode AlGaN/GaN Heterostructure Field-Effect Transistors with P-GaN Gate
    共著
    T. Sugiyama, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    The 36th International Symposium on Compound Semiconductors
    2009年08月
  • (一般講演)Atomic Layer Epitaxy of AlGaN
    共著
    K. Nagamatsu, D. Iida, K. Takeda, K. Nagata, T. Asai, M.Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    The 36th International Symposium on Compound Semiconductors
    2009年08月
  • (一般講演)High Efficiency Blue-Violet Light Emission in Porous SiC Produced by Anodic Method
    共著
    T. Nishimura, K. Miyoshi, F. Teramae, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    The 36th International Symposium on Compound Semiconductors
    2009年08月
  • (一般講演)GaInN/GaN p-i-n Light-Emitting Solar Cells
    共著
    Y. Fujiyama, Y. Kuwahara, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    The 36th International Symposium on Compound Semiconductors
    2009年08月
  • (一般講演)Strain control in GaInN/GaN multiple quantum wells for high-performance green-light emitters
    共著
    M. Iwaya, D. Iida, T. Matsubara, S. Kamiyama, H. Amano, I. Akasaki
    E-MRS Fall Meeting
    2009年09月
  • (一般講演)High-performance group-III-nitride-based light-emitting solar cells (LESCs)
    共著
    M. Iwaya*, Y. Kuwahara, Y. Fujiyama, D. Iida, S. Kamiyama, H. Amano, and I. Akasaki
    The International Conference on Advanced Materials (ICAM)
    2009年09月
  • (一般講演)Growth and Characterization of GaN Grown on Moth-Eye Patterned Sapphire Substrates
    共著
    A. Ishihara, H. Sakurai, R. Kawai, T. Kitano, A. Suzuki, T. Kondo, M. Iwaya, H. Amano1, S. Kamiyama, and I. Akasaki
    The 8th International Conference on Nitride Semiconductors
    2009年10月
  • (一般講演)Growth of GaInN Films by High Pressure MOVPE System at 200kPa
    共著
    D. Iida, K. Nagamatsu, K. Nagata, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    The 8th International Conference on Nitride Semiconductors
    2009年10月
  • (一般講演)Defects in Highly Mg-Doped AlN
    共著
    K. Nonaka, T. Asai, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    The 8th International Conference on Nitride Semiconductors
    2009年10月
  • (一般講演)Internal Quantum Efficiency of GaN/AlGaN Multi Quantum Wells on Different Dislocation Density Underlying Layer
    共著
    K. Takeda, F. Mori, Y. Ogiso, T. Ichikawa, K. Nonaka, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    The 8th International Conference on Nitride Semiconductors
    2009年10月
  • (一般講演)High Pressure MOVPE System with High-Speed Switching Valves for the Realization of High-Quality AlGaNat Low Temperatures
    共著
    K. Nagamatsu, D. Iida, K. Takeda, K. Nagata, T. Asai, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    The 8th International Conference on Nitride Semiconductors
    2009年10月
  • (一般講演)Growth of Low-Dislocation-Density AlGaN using Mg-Doped AlN Underlying Layer
    共著
    T. Asai, K. Nonaka, K. Ban, K. Nagata, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
    The 8th International Conference on Nitride Semiconductors
    2009年10月
  • (一般講演)Light-Emitting Diodes with GaInN/GaN Multi-Quantum Wells Grown on (1011) Plane Thick GaInN Template
    共著
    T. Matsubara, R. Kawai, K. Tamura, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    The 8th International Conference on Nitride Semiconductors
    2009年10月
  • (一般講演)High Output Power AlGaN/GaN Ultraviolet Light Emitting Diodes by Activation of Mg-Doped P-Type AlGaN in Oxygen Ambient
    共著
    K. Nagata, T. Ichikawa, K. Takeda, K. Nagamatsu, M. Iwaya, S.Kamiyama, H. Amano, and I. Akasaki
    The 8th International Conference on Nitride Semiconductors
    2009年10月
  • (一般講演)Threshold Voltage Control using SiNx in Normally Off AlGaN/GaN HFET with p-GaN Gate
    共著
    T. Sugiyama, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    The 8th International Conference on Nitride Semiconductors
    2009年10月
  • (一般講演)Nitride-based Light-emitting Solar Cell
    共著
    Y. Kuwahara, Y. Fujiyama, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    The 8th International Conference on Nitride Semiconductors
    2009年10月
  • (一般講演)AlGaN/GaN HFETs on Fe-doped GaN Substrates
    共著
    Y. Oshimura, K. Takeda, T. Sugiyama, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh, T. Udagawa
    The 8th International Conference on Nitride Semiconductors
    2009年10月
  • (一般講演)Realization of Extreme Light Extraction Efficiency for Moth-eye LEDs on SiC substrate using High-reflection Electrode
    共著
    R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, K. Su
    The 8th International Conference on Nitride Semiconductors
    2009年10月
  • (一般講演)Reduction in operating voltage of UV laser diode
    共著
    T. Ichikawa, K. Takeda, Y. Ogiso, K. Nagata, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan
    SPIE Photonic West
    2010年01月
  • (一般講演)Enhancement of light extraction efficiency on blue light-emitting diodes by moth-eye structure
    共著
    T. Kondo, A. Suzuki, F. Teramae, T. Kitano, Y. Kaneko, R. Kawai, K. Teshima, S. Maeda, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki
    SPIE Photonic West
    2010年01月
  • (一般講演)Growth of GaInN films by raised pressure MOVPE at 200kPa
    共著
    D. Iida, K. Nagata, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    ISPlasma2010
    2010年03月
  • (一般講演)High Temperature Operation of Normally Off AlGaN /GaN Heterostructure Field-Effect Transistors with p-GaN Gate
    共著
    T. Sugiyama, D. Iida, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    ISPlasma2010
    2010年03月
  • (一般講演)Ga0.89In0.11N/GaN Double Heterojunction p-i-n Solar Cells
    共著
    Y. Kuwahara, Y. Fujiyama, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    ISPlasma2010
    2010年03月
  • (一般講演)AlGaN Growth on (100) QUOTE -Ga2O3 by Metal-Organic Vaper Pahse Epitaxy
    共著
    Y. Kawai, S. Itoh, K.Takeda, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    ISPlasma2010
    2010年03月
  • (一般講演)Strain relaxation of AlGaN grown on AlN templates by misfit dislocation generation
    共著
    Z. H. Wu, K. Nonaka, Y. Kawai, T. Asai, F. A. Ponce, C. Q. Chen, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    2010年05月
  • (一般講演)Optical waveguide layers in UV laser diodes on the low dislocation density AlGaN underlying layer
    共著
    K. Takeda, T. Ichikawa, K. Nagata, D. Sawato, Y. Ogiso, Y. Oshimura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H., Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan
    The 37th International Conference of Compound Semiconductors
    2010年05月
  • (一般講演)Homoepitaxial growth of m-plane GaN film on miscut GaN substrates grown by Na flux method
    共著
    Y. Isobe, D. Iida, T. Sakakibara, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Imade, Y. Kitaoka, and Y. Mori
    The 3rd International Symposium on Growth of III-Nitrides
    2010年07月
  • (一般講演)Fabrication of nitride-based solar cells on freestanding GaN substrate
    共著
    Y. Kuwahara, Y. Fujiyama, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    The 3rd International Symposium on Growth of III-Nitrides
    2010年07月
  • (一般講演)Microstructure of Thick AlGaN Epilayers Using Mg-doped AlN Underlying Layer
    共著
    K. Nonaka, T. Asai, K. Ban, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, and Z. H. Wu
    The 3rd International Symposium on Growth of III-Nitrides
    2010年07月
  • (一般講演)Reduction in threshold current density of UV laser diode
    共著
    K. Nagata, K. Nonaka, T. Ichikawa, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan
    The 3rd International Symposium on Growth of III-Nitrides
    2010年07月
  • (一般講演)Transmission-electron-microscope characterization of AlGaN/GaN heterostructure on miscut GaN substrate grown by Na flux method
    共著
    T. Sakakibara, Y. Isobe, D. Iida, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, M. Imada, Y. Kitaoka, Y. Mori
    The 16th International Conference on Crystal Growth(ICCG-16)
    2010年08月
  • (一般講演)Selective formation of porous SiC by anodic method
    共著
    T. Yokoi, F. Teramae, S. Ezaki, T. Nishimura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
    The 16th International Conference on Crystal Growth(ICCG-16)
    2010年08月
  • (一般講演)Optimization of Initial Growth of the Nonpolar m-plane and a-plane GaN Grown on LPE-GaN Substrates by Na Flux Method
    共著
    Y. Isobe, D. Iida, T. Sakakibara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, M. Imade, Y. Kitaoka, and Y. Mori
    The International Workshop on Nitride semiconductors (IWN2010)
    2010年09月
  • (一般講演)Compensation Effect of Mg-doped a- and c-plane GaN Films Grown by Metalorganic Vapor Phase Epitaxy
    共著
    D. Iida, K. Tamura, K. Nonaka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H.Amano
    The International Workshop on Nitride semiconductors (IWN2010)
    2010年09月
  • (一般講演)Microstructure of GaInN/GaInN Superlattice on GaN Substrate
    共著
    T. Sugiyama, Y. Kuwabara, Y. Isobe, T. Fujii, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    The International Workshop on Nitride semiconductors (IWN2010)
    2010年09月
  • (一般講演)Transparent Electrode for UV Light-Emitting-Diodes
    共著
    K. Takehara, K. Takeda, K. Nagata, H. Sakurai, S. Ito, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    The International Workshop on Nitride semiconductors (IWN2010)
    2010年09月
  • (一般講演)Injection Efficiency in AlGaN-based UV Laser Diode
    共著
    K. Nagata, K. Takeda, Y. Oshimura, K. Takehara, H. Aoshima, S. Ito, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan
    The International Workshop on Nitride semiconductors (IWN2010)
    2010年09月
  • (一般講演)Development of High Efficiency 255-350 nm AlGaN-Based Light-Emitting Diodes
    共著
    C. Pernot, M. Kim, S. Fukahori, T. Inazu, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano
    The International Workshop on Nitride semiconductors (IWN2010)
    2010年09月
  • (一般講演)GaInN/AlGaN Heterostructure Field-effect Transistors
    共著
    H. Ikki, Y. Isobe, D. Iida, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, A. Bandoh, and T. Udagawa
    The International Workshop on Nitride semiconductors (IWN2010)
    2010年09月
  • (一般講演)Realization of Extremely Low Leakage Current in AlGaN/GaN HFETs by Pulsed Injection of Mg Source before Growth of Undoped GaN Buffer Layer
    共著
    Y. Oshimura, T. Sugiyama, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    The International Workshop on Nitride semiconductors (IWN2010)
    2010年09月
  • (一般講演)High-InN-molar-fraction Nitride-based Solar Cells using GaInN/GaInN Superlattice
    共著
    T. Fujii, Y. Kuwahara, D. Iida, Y. Fujiyama, Y. Morita, T. Sugiyama, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    The International Workshop on Nitride semiconductors (IWN2010)
    2010年09月
  • (一般講演)Realization of high-conversion-efficiency GaInN based solar cells
    共著
    M. Iwaya, Y. Kuwahara, T. Fujii, Y. Fujiyama, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano
    SPIE Photonic West
    2011年01月
  • (一般講演)Fabrication of high efficiency LED using moth-eye structure
    共著
    H. Sakurai, T. Kondo, F. Teramae, A. Suzuki, T. Kitano, M. Mori, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    SPIE Photonic West
    2011年01月
  • (一般講演)Effects of source material on epitaxial growth of fluorescent SiC
    共著
    V. Jokubavicius, R. Liljedahl, J. Sun, P. Hens, M. Kaiser, P. Wellmann, R. Yakimova, S. Kamiyama, and M. Syväjärvi
    European Materials Research Society Spring Meeting
    2011年05月
  • (一般講演)Growth of GaN and AlGaN on -Ga2O3 (100) substrate
    共著
    S. Ito, K. Takeda, K. Nagata, H. Aoshima, K. Takehara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)Al-based high reflectance p-type electrode for UV-LEDs
    共著
    K. Takehara, K. Takeda, K. Nagata, S. Ito, H. Aoshima, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)Nonpolar a-plane AlGaN/GaN heterostructure field-effect transistor grown on freestanding GaN substrate
    共著
    Y. Isobe, H. Ikki, T. Sakakibara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, M. Imade, Y. Kitaoka, and Y. Mori
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)Growth of AlInN by raised-pressure metalorganic vapor phase epitaxy
    共著
    A. Mishima, T. Makino, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, S. Sakakura, T. Tanikawa, Y. Honda, and H. Amano
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)Dependence of Internal Quantum Efficiency on Emission Wavelength in Nitride-Based LEDs
    共著
    S. Yamaguchi, D. Iida, T. Kitano, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)Improvement of light extraction efficiency of nitride-based blue LEDs on moth-eye patterned sapphire substrate
    共著
    T. Kondo, A. Ishihara, T. Kitano, S. Yamaguchi, A. Suzuki, K. Teshima, S. Maeda, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrates
    共著
    T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, Y. Yasue, Y. Oshimura, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, and Y. Mori
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)GaInN channel HFET with high InN molar fraction
    共著
    H. Ikki, Y. Isobe, T. Sakakibara, K. Ikeda, M. Iwaya, T. Takeuchi, I. Akasaki, and H.Amano
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)Fabrication and characterization of nonpolar a-plane nitride-based solar cells
    共著
    T. Nakao, Y. Fujiyama, T. Fujii, T. Sugiyama, S. Yamamoto, D. Iida, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)Relationship between the crystalline quality and characteristics in nitride-based solar cells
    共著
    T. Fujii, Y. Kuwahara, D. Iida, Y. Fujiyama, Y. Morita, T. Sugiyama, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells
    共著
    J. Yamamoto, K. Ban, K. Takde, K. Ide, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)Development of Deep UV-Light Source Based on High Power AlGaN LEDs
    共著
    C. Pernot, T. Inazu, S. Fukahori, M. H. Kim, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Yamaguchi. Y. Honda, and H. Amano
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors
    共著
    K. Ikeda, Y. Isobe, H. Ikki, T. Sakakibara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)Laser lift-off of AlN/sapphire for UV light-emitting diodes
    共著
    H. Aoshima, M. Mori, K. Takeda, K. Nagata, K. Takehara, S. Ito, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    The 9th International Conference of Nitride Semiconductors
    2011年07月
  • (一般講演)On stabilization of 3C-SiC on low off axis 6H-SiC substrates
    共著
    V. Jokubavicius, B. Lundqvist, R. Yakimova, S. Kamiyama and M. Syväjärvi
    The 2011 Silicon Carbide and Related Materials
    2011年09月
  • (一般講演)Growth of fluorescent SiC for white LEDs
    共著
    M. Syväjärvi, R. Yakimova, and S. Kamiyama [Invited]
    The 2011 Silicon Carbide and Related Materials
    2011年09月
  • (一般講演)Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide
    共著
    Y. Ou, V. Jokubavicius, C. Liu, R. W. Berg, M. Linnarsson, S. Kamiyama, Z. Lu, R. Yakimova, M. Syväjärvi, and H. Ou
    The 2011 Silicon Carbide and Related Materials
    2011年09月
  • (一般講演)Indium-zinc-oxide transparent electrode for nitride-based light-emitting diodes
    共著
    S. Mizutani, S. Nakashima, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, T. Kondo, F. Teramae, A. Suzuki, T. Kitano, M. Mori, M. Matsubara
    European Materials Research Society Spring Meeting
    2011年05月
  • (一般講演)Optimizations of Nitirde Semiconductor-Based Tunnel Junctions
    共著
    M. Kaga, K. Yamashita, T. Morita, Y. Kuwano, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, H. Amano, I. Akasaki
    16th International Conference on Metal Organic Vapor Phase Epitaxy
    2012年05月
  • (一般講演)Wideband near-infrared light source with over 1mW power by stacked InAs quantum dots/GaAs LED
    共著
    S. Fuchi, K. Tani, T. Arai, S. Kamiyama, and Y. Takeda
    Optoelectronic, and Photonic Materials and Applications
    2012年06月
  • (一般講演)Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
    共著
    J. W. Sun, S. Kamiyama, P. Wellmann, R. Liljedahl, R. Yakimova, M. Syväjärvi
    9th European Conference on SiC and Related Materials
    2012年09月
  • (一般講演)Carrier Lifetimes and In-Grown Defects in N-B codoped SiC
    共著
    V. Grivickas, K. Gulbina, V. Jokubavičiu, M. Syväjärvi, S. Kamiyama, M. Linnarsson
    9th European Conference on SiC and Related Materials
    2012年09月
  • (一般講演)High-sensitivity HFET type photosensors with a p-GaInN gate
    共著
    SPIE Photonic west
    2013年02月
  • (一般講演)Influence of growth interruption on performance of nitride-based blue LED
    共著
    SPIE Photonic west
    2013年02月
  • (一般講演)Fabrication of moth-eye patterned sapphire substrate (MPSS) and influence of height of corns on the performance of blue LEDs on MPSS
    共著
    SPIE Photonic west
    2013年02月
  • (一般講演)Performance of nitride-based light emitting diodes using an Indium-zinc-oxide transparent electrode with moth-eye structure
    共著
    SPIE Photonic west
    2013年02月
  • (一般講演)Direct Evidence of Electron Overflow by Monitoring Emissions from Second Active Region in Nitride-Based Blue LEDs
    共著
    Conference on LED and Its Industrial Application
    2013年04月
  • (一般講演)Nitride-Based p-Side Down LEDs on Tunnel Junction
    共著
    Conference on LED and Its Industrial Application
    2013年04月
  • (一般講演)Observation of GaInN/GaN Superlattice Structures by In Situ X-ray Diffraction Monitoring during Metalorganic Vapor-Phase Epitaxial Growth
    共著
    Conference on LED and Its Industrial Application
    2013年04月
  • (一般講演)Threshold Power Density Reduction in AlGaN/AlN Multiquntum Wells DUV (288 nm) Optical Pumped Laser
    共著
    Conference on LED and Its Industrial Application
    2013年04月
  • (一般講演)Bandgap dependence in nitride semiconductor-based tunnel junctions
    共著
    Asia-Pacific Workshop on Widegap Semiconductors
    2013年05月
  • (一般講演)Micro-Raman scattering and carrier diffusion studies in heavily co-doped 6H-SiC layers
    共著
    Europian-MRS Spring Meeting
    2013年05月
  • (一般講演)In situ X-ray diffraction monitoring of OMVPE GaInN/GaN superlattice growth
    共著
    The 19th American Conference on Crystal Growth and Epitaxy
    2013年07月
  • (一般講演)Extreme Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N
    共著
    10th International Conference of Nitride Semiconductors
    2013年08月
  • (一般講演)GaNSb Alloys Grown by Low Temperature Metalorganie Vapor Phase Epitaxy
    共著
    10th International Conference of Nitride Semiconductors
    2013年08月
  • (一般講演)Stable Balance of Emission Intensities from Two Active Regions in Nitride Semiconductor-Based Light Emitting Diodes
    共著
    10th International Conference of Nitride Semiconductors
    2013年08月
  • (一般講演)10-μm-Square Micro LED Array with Tunnel Junction
    共著
    10th International Conference of Nitride Semiconductors
    2013年08月
  • (一般講演)Advantages of the Moth-Eye Patterned Sapphire Substrate for the High Perfortnance Nitride Based LEDs
    共著
    10th International Conference of Nitride Semiconductors
    2013年08月
  • (一般講演)Improvement of Light Extraction Efficiency in 350-nm Emission UV Light-Emitting Diodes
    共著
    10th International Conference of Nitride Semiconductors
    2013年08月
  • (一般講演)In situ X-ray diffraction monitoring of GaInN/GaN superlattices growth by metalorganic vapor phase epitaxy
    共著
    JSAP-MRS Joint Symposia
    2013年09月
  • (一般講演)Enhanced internal quantum efficiency of green emission GaInN/GaN multiple quantum wells by surface plasmon coupling
    共著
    JSAP-MRS Joint Symposia
    2013年09月
  • (一般講演)Reduction of the threshold power density in AlGaN/AlN multiquntum wells DUV (288 nm) optical pumped lasers
    共著
    JSAP-MRS Joint Symposia
    2013年09月
  • (一般講演)Quantitative evaluation of electron overflow by monitoring emissions from second active region in nitride-based blue LEDs
    共著
    JSAP-MRS Joint Symposia
    2013年09月
  • (一般講演)Asymmetric AlN/GaN-DBRs with high reflectivity
    共著
    JSAP-MRS Joint Symposia
    2013年09月
  • (一般講演)Moth-eye Patterned Sapphire Substrate technology for cost effective high performance LED
    共著
    JSAP-MRS Joint Symposia
    2013年09月
  • (一般講演)MOVPE growth of embedded GaN nanocolumn
    共著
    JSAP-MRS Joint Symposia
    2013年09月
  • (一般講演)Externally high sensitivity group III nitride semiconductor based heterostructure field effect transistor type photosensors
    共著
    Conference on Materials and Applications for Sensors and Transducers
    2013年09月
  • (一般講演)Light absorption loss in fluorescent SiC
    共著
    The International Conference on Silicon Carbide and Related Materials
    2013年09月

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